Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1
- RS Stock No.:
- 906-4359
- Mfr. Part No.:
- BSC070N10NS3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£8.32
(exc. VAT)
£9.98
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5,000 unit(s) shipping from 13 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.832 | £8.32 |
*price indicative
- RS Stock No.:
- 906-4359
- Mfr. Part No.:
- BSC070N10NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.1mm | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 8-Pin TDSON BSC070N10NS3GATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC040N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin TDSON BSC035N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 40 V, 8-Pin TDSON BSC010N04LSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 8-Pin TDSON BSC020N03LSGATMA1
- Infineon OptiMOS™ 2 N-Channel MOSFET 20 V, 8-Pin TDSON BSC026N02KSGAUMA1