Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC028N06LS3GATMA1
- RS Stock No.:
- 754-5241
- Mfr. Part No.:
- BSC028N06LS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.60
(exc. VAT)
£4.32
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 3,456 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.80 | £3.60 |
| 20 - 48 | £1.635 | £3.27 |
| 50 - 98 | £1.53 | £3.06 |
| 100 - 198 | £1.425 | £2.85 |
| 200 + | £0.90 | £1.80 |
*price indicative
- RS Stock No.:
- 754-5241
- Mfr. Part No.:
- BSC028N06LS3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 139 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5.35mm | |
| Typical Gate Charge @ Vgs | 132 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5.35mm | ||
Typical Gate Charge @ Vgs 132 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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