Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- RS Stock No.:
- 906-4347
- Mfr. Part No.:
- BSC047N08NS3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£16.35
(exc. VAT)
£19.62
(inc. VAT)
FREE delivery for orders over £50.00
- 5,870 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 10 | £1.635 | £16.35 |
20 - 40 | £1.324 | £13.24 |
50 - 90 | £1.243 | £12.43 |
100 - 240 | £1.161 | £11.61 |
250 + | £1.079 | £10.79 |
*price indicative
- RS Stock No.:
- 906-4347
- Mfr. Part No.:
- BSC047N08NS3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 80 V | |
Series | OptiMOS™ 3 | |
Package Type | TDSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 8.9 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.1mm | |
Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 5.35mm | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.35mm | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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