Infineon OptiMOS™ 3 N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON BSC900N20NS3GATMA1
- RS Stock No.:
- 906-4400
- Mfr. Part No.:
- BSC900N20NS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.32
(exc. VAT)
£9.98
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 70 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.832 | £8.32 |
| 50 - 90 | £0.791 | £7.91 |
| 100 - 240 | £0.758 | £7.58 |
| 250 - 490 | £0.724 | £7.24 |
| 500 + | £0.475 | £4.75 |
*price indicative
- RS Stock No.:
- 906-4400
- Mfr. Part No.:
- BSC900N20NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15.2 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 62.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.35mm | |
| Length | 6.1mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 15.2 A | ||
Maximum Drain Source Voltage 200 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 62.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 5.35mm | ||
Length 6.1mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 9 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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