Infineon OptiMOS™ 3 N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON BSC093N04LSGATMA1

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RS Stock No.:
752-8164
Mfr. Part No.:
BSC093N04LSGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

49 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 3

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

8.6 nC @ 4.5 V

Length

6.35mm

Width

5.35mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1


This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.

Features & Benefits


• Provides a maximum continuous drain current of 49A
• Operates effectively in a voltage range of 40V
• Low drain-source resistance improves performance
• Supports surface mount design for easier integration
• High thermal stability with a maximum temperature rating of +150°C
• Suitable for diverse applications due to a wide gate threshold voltage range

Applications


• Ideal for power in automation and robotics
• Utilised in electric vehicle charging systems
• Suitable for power supply and conversion tasks
• Applied in motor control circuits and drives
• Used in telecommunications for efficient signal management

What type of load can this device handle effectively?


It can manage loads up to 49A, making it appropriate for high-current applications across various industries.

Is it compatible with surface mount technology?


Yes, it features a surface mount design, facilitating straightforward installation on PCBs.

What are the gate voltage limitations for this component?


The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.

Can it operate in extreme temperature conditions?


Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.

How does the low Rds(on) benefit power applications?


The low drain-source resistance reduces energy losses, enhancing efficiency in power management circuits.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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