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Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1

RS Stock No.:: 218-3055
Mfr. Part No.:: IPD90N10S4L06ATMA1
Brand:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1

Subtotal (1 pack of 10 units)*

£10.32

(exc. VAT)

£12.38

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,830 unit(s) ready to ship

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Units	Per unit	Per Pack*
10 +	£1.032	£10.32

*price indicative

RS Stock No.:: 218-3055
Mfr. Part No.:: IPD90N10S4L06ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS-T2
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	75nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Standards/Approvals	No
	Length	6.73mm
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS-T2
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 75nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Standards/Approvals No
	Length 6.73mm
	Height 2.41mm
	Automotive Standard AEC-Q101