Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD90N10S4L06ATMA1
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£10.32
(exc. VAT)
£12.38
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,930 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
10 + | £1.032 | £10.32 |
*price indicative
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 90 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ -T2 | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0066 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.1V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0066 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
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