Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD90N10S4L06ATMA1

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£10.32

(exc. VAT)

£12.38

(inc. VAT)

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10 +£1.032£10.32

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Packaging Options:
RS Stock No.:
218-3055
Mfr. Part No.:
IPD90N10S4L06ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0066 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature

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