Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2

Subtotal (1 pack of 10 units)*

£10.24

(exc. VAT)

£12.29

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,460 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +£1.024£10.24

*price indicative

Packaging Options:
RS Stock No.:
215-2520
Mfr. Part No.:
IPD90N06S4L03ATMA2
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low RDSon

Related links