Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD90N06S4L03ATMA2

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Subtotal (1 reel of 2500 units)*

£1,637.50

(exc. VAT)

£1,965.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.655£1,637.50

*price indicative

RS Stock No.:
215-2519
Mfr. Part No.:
IPD90N06S4L03ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0035 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra low RDSon

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