Infineon OptiMOS™ -T2 N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD100N06S403ATMA2

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Subtotal (1 reel of 2500 units)*

£1,440.00

(exc. VAT)

£1,727.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.576£1,440.00

*price indicative

RS Stock No.:
215-2501
Mfr. Part No.:
IPD100N06S403ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0035 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.

N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra Low RDSon
Ultra High ID

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