Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 2500 units)*

£1,440.00

(exc. VAT)

£1,727.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.576£1,440.00

*price indicative

RS Stock No.:
215-2501
Mfr. Part No.:
IPD100N06S403ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

128nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra Low RDSon

Ultra High ID

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