Infineon OptiMOS™ 5 N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD025N06NATMA1

Subtotal (1 reel of 2500 units)*

£1,787.50

(exc. VAT)

£2,145.00

(inc. VAT)

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2500 +£0.715£1,787.50

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RS Stock No.:
178-7369
Mfr. Part No.:
IPD025N06NATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Typical Gate Charge @ Vgs

71 nC @ 30 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Exempt

Infineon OptiMOS™5 Power MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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