Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK IPB033N10N5LFATMA1
- RS Stock No.:
- 220-7379
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,620.00
(exc. VAT)
£1,940.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
- Plus 999,997,000 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.62 | £1,620.00 |
*price indicative
- RS Stock No.:
- 220-7379
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 5 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0033 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.1V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 5 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0033 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.1V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 100 V, 3-Pin D2PAK IPB033N10N5LFATMA1
- onsemi NTB N-Channel MOSFET Transistor & Diode 100 V, 3-Pin D2PAK NTBS9D0N10MC
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode 100 V, 3-Pin D2PAK IPB065N10N3GATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IPB100N08S2L07ATMA1
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IRF3007STRLPBF
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 150 V, 3-Pin D2PAK IPB083N15N5LFATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode 80 V, 3-Pin D2PAK IPB019N08N3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode 80 V, 3-Pin D2PAK IPB031N08N5ATMA1