MPN

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263

RS Stock No.:: 220-7379
Mfr. Part No.:: IPB033N10N5LFATMA1
Brand:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£1,620.00

(exc. VAT)

£1,940.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 2,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£1.62	£1,620.00

*price indicative

RS Stock No.:: 220-7379
Mfr. Part No.:: IPB033N10N5LFATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	170A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 5
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 170A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 5
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB033N10N5LFATMA1

The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time