Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK IPB033N10N5LFATMA1

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£6.96

(exc. VAT)

£8.36

(inc. VAT)

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Per Pack*
2 - 18£3.48£6.96
20 - 48£3.06£6.12
50 - 98£2.89£5.78
100 - 198£2.68£5.36
200 +£2.47£4.94

*price indicative

Packaging Options:
RS Stock No.:
220-7380
Mfr. Part No.:
IPB033N10N5LFATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0033 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.1V

Number of Elements per Chip

1

The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time

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