Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode, 105 A, 150 V, 3-Pin D2PAK IPB083N15N5LFATMA1
- RS Stock No.:
- 220-7385
- Mfr. Part No.:
- IPB083N15N5LFATMA1
- Brand:
- Infineon
Save 28% when you buy 200 units
Subtotal (1 pack of 2 units)*
£10.38
(exc. VAT)
£12.46
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £5.19 | £10.38 |
| 20 - 48 | £4.62 | £9.24 |
| 50 - 98 | £4.31 | £8.62 |
| 100 - 198 | £4.05 | £8.10 |
| 200 + | £3.735 | £7.47 |
*price indicative
- RS Stock No.:
- 220-7385
- Mfr. Part No.:
- IPB083N15N5LFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 105 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0083 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 105 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0083 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 150 V, 3-Pin D2PAK IPB083N15N5LFATMA1
- ROHM RJ1 N-Channel MOSFET 150 V, 3-Pin D2PAK RJ1R10BBHTL1
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 7-Pin D2PAK IRFS4115TRL7PP
- Infineon HEXFET N-Channel MOSFET 150 V, 7-Pin D2PAK-7 AUIRFS4115-7TRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin D2PAK AUIRF1404STRL
- onsemi NTB N-Channel MOSFET Transistor & Diode 100 V, 3-Pin D2PAK NTBS9D0N10MC
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IRF3007STRLPBF
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode 80 V, 3-Pin D2PAK IPB019N08N3GATMA1