Infineon HEXFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF

Subtotal (1 reel of 800 units)*

£1,072.00

(exc. VAT)

£1,288.00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +£1.34£1,072.00

*price indicative

RS Stock No.:
165-5599
Mfr. Part No.:
IRL2910STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

140 nC @ 5 V

Length

10.67mm

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

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