Infineon IQD0 N-Channel MOSFET Transistor, 276 A, 100 V, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- RS Stock No.:
- 351-909
- Mfr. Part No.:
- IQD020N10NM5CGSCATMA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 351-909
- Mfr. Part No.:
- IQD020N10NM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 276 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-WHTFN-9 | |
| Series | IQD0 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 276 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-WHTFN-9 | ||
Series IQD0 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 100 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
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