Infineon IQD0 N-Channel MOSFET Transistor, 276 A, 100 V, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

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Subtotal (1 pack of 2 units)*

£9.15

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£10.98

(inc. VAT)

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2 - 18£4.575£9.15
20 - 198£4.12£8.24
200 - 998£3.80£7.60
1000 - 1998£3.525£7.05
2000 +£3.16£6.32

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RS Stock No.:
351-909
Mfr. Part No.:
IQD020N10NM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

276 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WHTFN-9

Series

IQD0

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package

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