Infineon IQD0 N-Channel MOSFET Transistor, 151 A, 150 V, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1
- RS Stock No.:
- 351-911
- Mfr. Part No.:
- IQD063N15NM5CGSCATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.53
(exc. VAT)
£11.436
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.765 | £9.53 |
| 20 - 198 | £4.29 | £8.58 |
| 200 - 998 | £3.955 | £7.91 |
| 1000 - 1998 | £3.67 | £7.34 |
| 2000 + | £3.29 | £6.58 |
*price indicative
- RS Stock No.:
- 351-911
- Mfr. Part No.:
- IQD063N15NM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 151 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | IQD0 | |
| Package Type | PG-WHTFN-9 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 151 A | ||
Maximum Drain Source Voltage 150 V | ||
Series IQD0 | ||
Package Type PG-WHTFN-9 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 150 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
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