Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

Subtotal (1 reel of 6000 units)*

£8,466.00

(exc. VAT)

£10,158.00

(inc. VAT)

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Units
Per unit
Per Reel*
6000 +£1.411£8,466.00

*price indicative

RS Stock No.:
284-770
Mfr. Part No.:
IQE050N08NM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.

Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces power losses
Robust thermal resistance for reliability
Avalanche tested for extreme conditions
Pb free lead plating for safety
Halogen free construction meets IEC standards
Qualified per JEDEC industry standards

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