Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 700 A, 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1
- RS Stock No.:
- 348-875
- Mfr. Part No.:
- IQDH35N03LM5CGSCATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 348-875
- Mfr. Part No.:
- IQDH35N03LM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 700A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 700A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.35 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
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