Infineon OptiMOS 5 N-Channel MOSFET, 447 A, 60 V, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1
- RS Stock No.:
- 348-881
- Mfr. Part No.:
- IQDH88N06LM5CGSCATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 348-881
- Mfr. Part No.:
- IQDH88N06LM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 447 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS 5 | |
| Package Type | PG-WHTFN-9 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 447 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS 5 | ||
Package Type PG-WHTFN-9 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.86 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Reduced voltage overshoot
Increased maximum current capability
Fast switching
Increased maximum current capability
Fast switching
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