Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

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Subtotal (1 pack of 5 units)*

£9.77

(exc. VAT)

£11.725

(inc. VAT)

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Per Pack*
5 - 45£1.954£9.77
50 - 95£1.856£9.28
100 - 495£1.72£8.60
500 - 995£1.582£7.91
1000 +£1.524£7.62

*price indicative

Packaging Options:
RS Stock No.:
284-765
Mfr. Part No.:
IQE046N08LM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS

Package Type

PG-WHTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor delivers high efficiency and reliability tailored for demanding applications. With a focus on optimised performance in switch mode power supplies, this N channel MOSFET excels in synchronous rectification tasks. Engineered with advanced thermal characteristics, it ensures superior heat dissipation alongside ultra low on resistance, enabling effective operation even under strict electrical demands. The component stands out for its extensive validation under JEDEC standards for industrial applications, ensuring peace of mind for professional users. Ideal for industrial power circuits, the transistor incorporates a robust avalanche rating, ensuring resilience during high stress scenarios, making it a smart choice for tomorrow's power management systems.

Optimised for high performance SMPS
Logic level control for low voltage systems
100% avalanche tested for reliability
Halogen free design for environmental responsibility
Pb free lead plating for modern standards
RoHS compliant for safe usage
Superior thermal resistance for durability

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