Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

RS Stock No.:: 284-765
Mfr. Part No.:: IQE046N08LM5CGSCATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

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Subtotal (1 pack of 5 units)*

£9.77

(exc. VAT)

£11.725

(inc. VAT)

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In Stock

100 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£1.954	£9.77
50 - 95	£1.856	£9.28
100 - 495	£1.72	£8.60
500 - 995	£1.582	£7.91
1000 +	£1.524	£7.62

*price indicative

RS Stock No.:: 284-765
Mfr. Part No.:: IQE046N08LM5CGSCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-WHTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, IEC61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-WHTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IQE046N08LM5CGSCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor delivers high efficiency and reliability tailored for demanding applications. With a focus on optimised performance in switch mode power supplies, this N channel MOSFET excels in synchronous rectification tasks. Engineered with Advanced thermal characteristics, it ensures superior heat dissipation alongside ultra low on resistance, enabling effective operation even under strict electrical demands. The component stands out for its extensive validation under JEDEC standards for industrial applications, ensuring peace of mind for professional users. Ideal for industrial power circuits, the transistor incorporates a robust avalanche rating, ensuring resilience during high stress scenarios, making it a smart choice for tomorrow's power management systems.

Optimised for high performance SMPS

Logic level control for low voltage systems

100% avalanche tested for reliability

Halogen free design for environmental responsibility

Pb free lead plating for modern standards

RoHS compliant for safe usage

Superior thermal resistance for durability