Infineon OptiMOS SiC N-Channel MOSFET, 132 A, 60 V, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Subtotal (1 reel of 6000 units)*

£8,058.00

(exc. VAT)

£9,672.00

(inc. VAT)

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Units
Per unit
Per Reel*
6000 +£1.343£8,058.00

*price indicative

RS Stock No.:
284-757
Mfr. Part No.:
IQE030N06NM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS

Package Type

PG-WHTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.

Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications

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