MPN

Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1

RS Stock No.:: 351-912
Mfr. Part No.:: IQD020N10NM5SCATMA1
Brand:: Infineon

Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1

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Subtotal (1 pack of 2 units)*

£9.15

(exc. VAT)

£10.98

(inc. VAT)

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In Stock

5,000 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£4.575	£9.15
20 - 198	£4.12	£8.24
200 - 998	£3.80	£7.60
1000 - 1998	£3.525	£7.05
2000 +	£3.16	£6.32

*price indicative

RS Stock No.:: 351-912
Mfr. Part No.:: IQD020N10NM5SCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	276A
	Maximum Drain Source Voltage Vds	100V
	Series	IQD0
	Package Type	PG-WHSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.05mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	107nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	333W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	6 mm
	Length	5mm
	Standards/Approvals	IEC61249-2-21, RoHS, JEDEC
	Height	0.75mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 276A
	Maximum Drain Source Voltage Vds 100V
	Series IQD0
	Package Type PG-WHSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.05mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 107nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 333W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 6 mm
	Length 5mm
	Standards/Approvals IEC61249-2-21, RoHS, JEDEC
	Height 0.75mm
	Automotive Standard No

Datasheet - IQD020N10NM5SCATMA1

COO (Country of Origin):: MY

The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio