Infineon OptiMOS SiC N-Channel MOSFET, 151 A, 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- RS Stock No.:
- 284-754
- Mfr. Part No.:
- IQE022N06LM5SCATMA1
- Brand:
- Infineon
Subtotal (1 reel of 6000 units)*
£8,064.00
(exc. VAT)
£9,678.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
6000 + | £1.344 | £8,064.00 |
*price indicative
- RS Stock No.:
- 284-754
- Mfr. Part No.:
- IQE022N06LM5SCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 151 A | |
Maximum Drain Source Voltage | 60 V | |
Series | OptiMOS | |
Package Type | PG-WHSON-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 151 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS | ||
Package Type PG-WHSON-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.
Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-TSON-8 IQE022N06LM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon IQD0 N-Channel MOSFET Transistor 150 V, 8-Pin PG-WHSON-8 IQD063N15NM5SCATMA1