Infineon OptiMOS SiC N-Channel MOSFET, 151 A, 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

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Subtotal (1 pack of 5 units)*

£9.31

(exc. VAT)

£11.17

(inc. VAT)

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5 - 45£1.862£9.31
50 - 95£1.768£8.84
100 - 495£1.638£8.19
500 - 995£1.508£7.54
1000 +£1.452£7.26

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Packaging Options:
RS Stock No.:
284-755
Mfr. Part No.:
IQE022N06LM5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

60 V

Package Type

PG-WHSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.

Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use

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