Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

Subtotal (1 reel of 6000 units)*

£8,466.00

(exc. VAT)

£10,158.00

(inc. VAT)

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Units
Per unit
Per Reel*
6000 +£1.411£8,466.00

*price indicative

RS Stock No.:
284-767
Mfr. Part No.:
IQE046N08LM5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Package Type

PG-WHSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.

Optimised for high performance switching
Low on resistance enhances energy efficiency
Robust thermal performance for longevity
Avalanche tested for reliability
Pb free lead plating meets RoHS standards
Halogen free for eco friendly compliance
Ideal for stringent industrial applications
Compact package for easy integration

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