Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

RS Stock No.:: 284-767
Mfr. Part No.:: IQE046N08LM5SCATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

Subtotal (1 reel of 6000 units)*

£8,466.00

(exc. VAT)

£10,158.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

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Units	Per unit	Per Reel*
6000 +	£1.411	£8,466.00

*price indicative

RS Stock No.:: 284-767
Mfr. Part No.:: IQE046N08LM5SCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-WHSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-WHSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, RoHS
	Automotive Standard No

Datasheet - IQE046N08LM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.

Optimised for high performance switching

Low on resistance enhances energy efficiency

Robust thermal performance for longevity

Avalanche tested for reliability

Pb free lead plating meets RoHS standards

Halogen free for eco friendly compliance

Ideal for stringent industrial applications

Compact package for easy integration