Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- RS Stock No.:
- 284-780
- Mfr. Part No.:
- IQE065N10NM5SCATMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-780
- Mfr. Part No.:
- IQE065N10NM5SCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high performance applications, offering robust capabilities in synchronous rectification for Switch Mode Power Supplies. This N channel MOSFET features a compact PG WHSON 8 package, expertly designed to manage higher levels of power while ensuring maximum efficiency and reliability. It boasts a unique avalanche testing certification and superior thermal resistance, making it ideal for industrial applications where performance is critical. With a drain source voltage rating of 100 V and an impressively low on state resistance, this transistor stands out in the market. Its cutting edge design ensures that it meets the rigorous standards of the IEC60947 5 2 and RoHS compliance, thus catering to environmentally conscious manufacturers.
Optimised for high efficiency SMPS
100% avalanche tested for reliability
Superior thermal performance compared to competitors
Pb free lead plating for environmental compliance
Complies with RoHS for reduced ecological footprint
Halogen free construction minimizes environmental impact
Tailored for stringent industrial standards
100% avalanche tested for reliability
Superior thermal performance compared to competitors
Pb free lead plating for environmental compliance
Complies with RoHS for reduced ecological footprint
Halogen free construction minimizes environmental impact
Tailored for stringent industrial standards
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS 6 N-Channel MOSFET 40 V, 8-Pin PG-WHSON-8 IQD005N04NM6SCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 25 V, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 30 V, 8-Pin PG-WHSON-8 IQDH35N03LM5SCATMA1