Vishay Siliconix TrenchFET Dual N/P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3720
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
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- RS Stock No.:
- 178-3720
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | TrenchFET | |
| Package Type | PowerPak SO-8L Dual | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 34 W, 34 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 5.99mm | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.07mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 40 V | ||
Series TrenchFET | ||
Package Type PowerPak SO-8L Dual | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W, 34 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 5.99mm | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1.07mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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