onsemi SuperFET II N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220F FCPF400N80Z
- RS Stock No.:
- 864-7925
- Mfr. Part No.:
- FCPF400N80Z
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£5.72
(exc. VAT)
£6.865
(inc. VAT)
FREE delivery for orders over £50.00
- Final 320 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.144 | £5.72 |
*price indicative
- RS Stock No.:
- 864-7925
- Mfr. Part No.:
- FCPF400N80Z
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | TO-220F | |
Series | SuperFET II | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 340 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 35.7 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 43 nC @ 10 V | |
Length | 10.36mm | |
Width | 4.9mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 16.07mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220F | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 340 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 35.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 43 nC @ 10 V | ||
Length 10.36mm | ||
Width 4.9mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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