Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.

• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs

• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems

The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.

Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.

With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.

This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.