Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 IRLL2705TRPBF

RS Stock No.:: 168-8747
Mfr. Part No.:: IRLL2705TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 IRLL2705TRPBF

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Subtotal (1 reel of 2500 units)*

£715.00

(exc. VAT)

£857.50

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 29 December 2025

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Units	Per unit	Per Reel*
2500 - 2500	£0.286	£715.00
5000 +	£0.272	£680.00

*price indicative

RS Stock No.:: 168-8747
Mfr. Part No.:: IRLL2705TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	5.2 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.1 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	32 nC @ 10 V
	Width	3.7mm
	Length	6.7mm
	Height	1.739mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 5.2 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.1 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 32 nC @ 10 V
	Width 3.7mm
	Length 6.7mm
	Height 1.739mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: MY

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF

This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.

Features & Benefits

• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs

Applications

• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems

What is the maximum voltage this component can handle?

The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.

Can it operate at high temperatures?

Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.

How does this component manage heat during operation?

With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.

Is it compatible with standard PCB designs?

This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.