Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 IRFL4105TRPBF
- RS Stock No.:
- 827-3994
- Mfr. Part No.:
- IRFL4105TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£7.46
(exc. VAT)
£8.96
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 2,280 unit(s) shipping from 07 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.373 | £7.46 |
| 100 - 180 | £0.287 | £5.74 |
| 200 - 480 | £0.269 | £5.38 |
| 500 - 980 | £0.25 | £5.00 |
| 1000 + | £0.232 | £4.64 |
*price indicative
- RS Stock No.:
- 827-3994
- Mfr. Part No.:
- IRFL4105TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Transistor Material Si | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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