Infineon HEXFET N-Channel MOSFET, 4.4 A, 55 V, 3-Pin SOT-223 IRLL024NTRPBF

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Subtotal (1 reel of 2500 units)*

£620.00

(exc. VAT)

£745.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500£0.248£620.00
5000 +£0.236£590.00

*price indicative

RS Stock No.:
168-8745
Mfr. Part No.:
IRLL024NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+150 °C

Width

3.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10.4 nC @ 5 V

Length

6.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.739mm

COO (Country of Origin):
MY

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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