Infineon HEXFET Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 4-Pin SOT-223 IRFL024ZTRPBF

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Subtotal (1 pack of 25 units)*

£11.70

(exc. VAT)

£14.05

(inc. VAT)

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  • 250 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100£0.468£11.70
125 - 225£0.445£11.13
250 - 600£0.426£10.65
625 - 1225£0.281£7.03
1250 +£0.223£5.58

*price indicative

Packaging Options:
RS Stock No.:
262-6766
Mfr. Part No.:
IRFL024ZTRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.1A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Repetitive avalanche allowed up to Tjmax

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