Infineon HEXFET Dual Silicon N-Channel MOSFET, 5.1 A, 55 V, 4-Pin SOT-223 IRFL024ZTRPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

£11.70

(exc. VAT)

£14.05

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 250 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 100£0.468£11.70
125 - 225£0.445£11.13
250 - 600£0.426£10.65
625 - 1225£0.281£7.03
1250 +£0.223£5.58

*price indicative

Packaging Options:
RS Stock No.:
262-6766
Mfr. Part No.:
IRFL024ZTRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links