Infineon HEXFET Dual Silicon N-Channel MOSFET, 2.8 A, 55 V, 4-Pin SOT-223 IRFL024NTRPBF

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Subtotal (1 pack of 25 units)*

£9.65

(exc. VAT)

£11.575

(inc. VAT)

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  • 1,250 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100£0.386£9.65
125 - 225£0.367£9.18
250 - 600£0.351£8.78
625 - 1225£0.336£8.40
1250 +£0.212£5.30

*price indicative

Packaging Options:
RS Stock No.:
262-6764
Mfr. Part No.:
IRFL024NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low on-resistance
Dynamic dv/dt rating
Fasts switching
Fully avalanche rated

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