Infineon HEXFET Dual Silicon N-Channel MOSFET, 5.1 A, 55 V, 4-Pin SOT-223 IRFL024ZTRPBF

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Subtotal (1 reel of 2500 units)*

£517.50

(exc. VAT)

£620.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500£0.207£517.50
5000 +£0.197£492.50

*price indicative

RS Stock No.:
262-6765
Mfr. Part No.:
IRFL024ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax

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