Infineon HEXFET N-Channel MOSFET, 4.4 A, 55 V, 3-Pin SOT-223 IRLL024NTRPBF
- RS Stock No.:
- 830-3300
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£9.88
(exc. VAT)
£11.86
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 540 unit(s) shipping from 08 September 2025
- Plus 1,340 unit(s) shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.494 | £9.88 |
| 100 - 180 | £0.341 | £6.82 |
| 200 - 480 | £0.321 | £6.42 |
| 500 - 980 | £0.296 | £5.92 |
| 1000 + | £0.277 | £5.54 |
*price indicative
- RS Stock No.:
- 830-3300
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.4 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.7mm | |
| Typical Gate Charge @ Vgs | 10.4 nC @ 5 V | |
| Height | 1.739mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.4 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 10.4 nC @ 5 V | ||
Height 1.739mm | ||
Minimum Operating Temperature -55 °C | ||
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