N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Infineon IPD088N06N3GBTMA1

Name: N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Infineon IPD088N06N3GBTMA1
Brand: Infineon
SKU: 827-5081
Price: 0.81 GBP

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Price Each (In a Pack of 25)

£0.677

(exc. VAT)

£0.812

(inc. VAT)

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	8.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	71 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	36 nC @ 10 V
Width	6.22mm
Transistor Material	Si
Length	6.73mm
Number of Elements per Chip	1
Height	2.41mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	8.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	71 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	36 nC @ 10 V
Width	6.22mm
Transistor Material	Si
Length	6.73mm
Number of Elements per Chip	1
Height	2.41mm
Minimum Operating Temperature	-55 °C

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