Infineon OptiMOS™ 3 N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK IPD220N06L3GBTMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

39.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Length

6.73mm

Width

6.22mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V