Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD50N03S4L06ATMA1
- RS Stock No.:
- 857-4590
- Mfr. Part No.:
- IPD50N03S4L06ATMA1
- Brand:
- Infineon
Save 4% when you buy 12500 units
Subtotal (1 reel of 2500 units)*
£880.00
(exc. VAT)
£1,055.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.352 | £880.00 |
| 5000 - 10000 | £0.343 | £857.50 |
| 12500 + | £0.335 | £837.50 |
*price indicative
- RS Stock No.:
- 857-4590
- Mfr. Part No.:
- IPD50N03S4L06ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 56 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 56 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD50N04S408ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD50N04S410ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD40N03S4L08ATMA1
- Infineon N-Channel MOSFET 60 V, 3-Pin DPAK IPD079N06L3GATMA1
- ROHM N-Channel MOSFET 6 V, 3-Pin DPAK RD3P03BBHTL1