Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50N04S410ATMA1
- RS Stock No.:
- 857-4600
- Mfr. Part No.:
- IPD50N04S410ATMA1
- Brand:
- Infineon
- RS Stock No.:
- 857-4600
- Mfr. Part No.:
- IPD50N04S410ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 41 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ T2 Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin DPAK FDD8444L-F085
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD50N03S4L06ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD75N04S406ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD40N03S4L08ATMA1
- Vishay SQ Rugged N-Channel MOSFET 50 V, 3-Pin DPAK SQD50N05-11L_GE3
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD088N06N3GBTMA1
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin D2PAK FDB8447L
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
