Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50N04S410ATMA1
- RS Stock No.:
- 857-4600
- Mfr. Part No.:
- IPD50N04S410ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£617.50
(exc. VAT)
£740.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.247 | £617.50 |
*price indicative
- RS Stock No.:
- 857-4600
- Mfr. Part No.:
- IPD50N04S410ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | OptiMOS™ -T2 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 41 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
Transistor Material | Si | |
Height | 2.41mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Transistor Material Si | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ T2 Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD50N04S408ATMA1
- ROHM RD3G500GN N-Channel MOSFET 40 V, 3-Pin DPAK RD3G500GNTL
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin DPAK FDD8444L-F085
- Vishay N-Channel MOSFET 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3
- Infineon P-Channel MOSFET 40 V, 3-Pin DPAK IPD50P04P413ATMA2
- Vishay P-Channel MOSFET 40 V, 3-Pin DPAK SUD50P04-08-GE3
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin DPAK IPD50P04P413ATMA1
- Diodes Inc P-Channel MOSFET 40 V, 3-Pin DPAK DMPH4023SK3-13