onsemi QFET N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK FQD20N06TM
- RS Stock No.:
- 166-2634
- Mfr. Part No.:
- FQD20N06TM
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£430.00
(exc. VAT)
£515.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.172 | £430.00 |
*price indicative
- RS Stock No.:
- 166-2634
- Mfr. Part No.:
- FQD20N06TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DPAK (TO-252) | |
Series | QFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 63 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 11.5 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 6.1mm | |
Maximum Operating Temperature | +150 °C | |
Length | 6.6mm | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 63 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 11.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.6mm | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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