onsemi QFET N-Channel MOSFET, 22 A, 60 V, 3-Pin TO-220F FQPF30N06L
- RS Stock No.:
- 145-5666
- Mfr. Part No.:
- FQPF30N06L
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£67.35
(exc. VAT)
£80.80
(inc. VAT)
Units | Per unit | Per Tube* |
---|---|---|
50 + | £1.347 | £67.35 |
*price indicative
- RS Stock No.:
- 145-5666
- Mfr. Part No.:
- FQPF30N06L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 22 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220F | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 45 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 38 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 4.9mm | |
Length | 10.36mm | |
Typical Gate Charge @ Vgs | 15 nC @ 5 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Height | 16.07mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220F | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 15 nC @ 5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 16.07mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220F FQPF13N06L
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220F FQPF20N06L
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220F FQPF85N06
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF7N80C
- onsemi QFET N-Channel MOSFET 500 V, 3-Pin TO-220F FQPF9N50CF
- onsemi QFET N-Channel MOSFET 650 V, 3-Pin TO-220F FQPF7N65C
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin TO-220F FQPF3N80C
- onsemi QFET N-Channel MOSFET 900 V, 3-Pin TO-220F FQPF9N90CT