Infineon OptiMOS™ N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK IPD30N03S2L10ATMA1
- RS Stock No.:
- 857-4587
- Mfr. Part No.:
- IPD30N03S2L10ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
£1,075.00
(exc. VAT)
£1,300.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.43 | £1,075.00 |
| 5000 - 10000 | £0.419 | £1,047.50 |
| 12500 + | £0.409 | £1,022.50 |
*price indicative
- RS Stock No.:
- 857-4587
- Mfr. Part No.:
- IPD30N03S2L10ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZPBF
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD220N06L3GBTMA1
- Infineon N-Channel MOSFET 120 V, 3-Pin DPAK IPD30N12S3L31ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4
- Infineon OptiMOS™ Silicon N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S215ATMA2
- Infineon OptiMOS™-T N-Channel MOSFET 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1