Infineon HEXFET N-Channel MOSFET, 65 A, 30 V, 3-Pin DPAK IRLR7821PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Height

2.39mm

Minimum Operating Temperature

-55 °C