Name: Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF
Brand: Infineon
SKU: 830-3344
Price: 0.69 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	265 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	20 nC @ 5 V
	Transistor Material	Si
	Width	6.22mm
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 265 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 20 nC @ 5 V
	Transistor Material Si
	Width 6.22mm
	Height 2.39mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF

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