Name: Infineon HEXFET N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620PBF
Brand: Infineon
SKU: 145-9597
Price: 1.60 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	24 A
	Maximum Drain Source Voltage	200 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	78 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	144 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Width	6.22mm
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 24 A
	Maximum Drain Source Voltage 200 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 78 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 144 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Width 6.22mm
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Height 2.39mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620PBF

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