Infineon HEXFET N-Channel MOSFET, 16 A, 100 V, 3-Pin DPAK IRFR3910PBF
- RS Stock No.:
- 541-0137P
- Mfr. Part No.:
- IRFR3910PBF
- Brand:
- Infineon
Discontinued
- RS Stock No.:
- 541-0137P
- Mfr. Part No.:
- IRFR3910PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 115 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 115 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRFR3910 is the 100V single N-channel HEXFET power MOSFET in a D-Pak package. The D-PAK is designed for the surface mounting using vapour phase, infrared or wave soldering techniques.
Fast switching
Fast avalanched rated
Lead free
Fast avalanched rated
Lead free
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 110 V, 3-Pin DPAK IRFR3910TRLPBF
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRFU3910PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120NTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRFR3709ZTRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK AUIRFR3806TRL
- Infineon HEXFET N-Channel MOSFET 80 V, 3-Pin DPAK IRLR2908TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR024NTRLPBF