Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRLR3110ZTRLPBF
- RS Stock No.:
- 130-1020
- Mfr. Part No.:
- IRLR3110ZTRLPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 130-1020
- Mfr. Part No.:
- IRLR3110ZTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 63 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 140 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V DPAK IRLR3110ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR4510TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRLU3110ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V DPAK IRLR3110ZTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRLR120NTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3710ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3411TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120NTRLPBF