Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRLR3110ZTRLPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

140 W

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

9.65mm

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

4.83mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C