Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF
- RS Stock No.:
- 650-4867
- Mfr. Part No.:
- IRLU3110ZPBF
- Brand:
- Infineon
- RS Stock No.:
- 650-4867
- Mfr. Part No.:
- IRLU3110ZPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 63 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | IPAK (TO-251) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 14 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
Width | 2.3mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Height | 6.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Width 2.3mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 6.1mm | ||
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 63A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLU3110ZPBF
Features & Benefits
• Supports high continuous drain current up to 63A
• Maximum drain-source voltage rated at 100V
• Exceptional thermal stability with a maximum operating temperature of +175°C
• Fast switching speeds enhance system responsiveness
• Resistant to repetitive avalanche conditions for further reliability
Applications
• Suitable for motor control systems
• Ideal for switching regulators and inverters
• Employed in circuits requiring high current handling
• Utilised in power management systems within industrial equipment
What are the ideal operating conditions for this MOSFET?
How does the RDS(on) impact efficiency?
Can it be used in high-frequency applications?
What is the significance of the peak gate-source voltage?
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