Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V, 3-Pin IPAK IRFU7546PBF
- RS Stock No.:
- 218-3126
- Mfr. Part No.:
- IRFU7546PBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
£14.40
(exc. VAT)
£17.20
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 07 June 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.72 | £14.40 |
| 40 - 80 | £0.66 | £13.20 |
| 100 - 220 | £0.61 | £12.20 |
| 240 - 480 | £0.565 | £11.30 |
| 500 + | £0.55 | £11.00 |
*price indicative
- RS Stock No.:
- 218-3126
- Mfr. Part No.:
- IRFU7546PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 99W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 99W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-Channel power MOSFET. It is used for applications where switching is below <100KHz.
Lead-free, RoHS compliant
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V, 3-Pin IPAK
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- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK